Research Platform | Chaoqun Dang's Group

SEM5000X

Electron beam system

Electron gun type: schottky field emission filament:
Accelerating voltage: 0.02 kV~30 kV;
Minimum resolution: 0.6 nm@15 kV;
Beam intensity: 1 pA~ 20 nA;
Magnification times: 1×-2500 k×.

X-Nano TEM specimen holder

High voltage mode range: -100 V~+100 V；
Coarse range: X/Y/Z directions 2 mm；
Fine tuning range: X direction 1 μm,Y/Z direction 7 μm;
Fine-tuned resolution: X direction ≤0.1 nm, Y/Z direction≤0.2 nm;
Current measuring range: 10 nA~10 mA.

Hysitron PI 89 SEM PicoIndenter

Nanoindentation

Maximum load: 500 mN;
Maximum pressing displacement: 15 μm.

Nanoscratch

Maximum transverse force: 30 mN;
Maximum lateral displacement: 20 μm.

lon Milling

Accelerating voltage: 0.1 keV~10 keV;
Beam spot size: 300 μm~5 mm;
lon beam current density: 10 mA/cm²;
lon beam current density: -15°~+10°.

Turning and Milling Integrated Ultra-Precision Machining System

Nanotech 650 FGv2

Working Load: radial ≥85 kg, axial ≥180 kg；

Type: Air bearing groove compensation (liquid cooling)；
Travel: 360° two-way；
Drive system: brushless DC motorstiffness:

axial ≥400 N/μm, radial (nose)≥130 N/μm；

Positioning accuracy: +1.0 arcseconds or better；

Feedback resolution: 0.01 arcsecond or better；

Maximum speed: ≥3000 rpm Motion；

Accuracy: axial ≤12.5 nm, radial≤12.5 nm

5-Axis precision machining center

GF Mikron MIL S600U

Travel X,Y,Z: 800×600×500 mm；
Swiveling axis: +30°/-110°；
Rotary axis: n×360°；
Rapid traverse X,Y,Z: 61 m/min；
Rapid traverse: swiveling/Rotating: 60 / 150 rpm；
Working spindle (40% ED, S6): 36,000 (HSK-E50)/33 / 21 rpm/kw/Nm
Max. load (incl. pallet): 120 kg；
Tool magazine: 15/30/60/120/170/220 (HSK-E50)；
Machine weight: 9,900 kg；
Control unit: TNC 640 (Heidenhain)

5-Axis Grinding Center

JDGR100(P0EHE)

X/Y/Z axis motion positioning accuracy: 0.002/0.002/0.002 mm；

X/Y/Z axis repeated positioning accuracy: 0.0018/0.0018/0.0018 mm；

B/C axis motion positioning accuracy: 8"/8"；

B/C axis repeated positioning accuracy: 5"/5"；

X/Y/Z axis working stroke: 400/200/200 mm；

B/C axis rotation Angle: +120°/360；

X/Y/Z axis fast moving speed: 15 m/min；

B/C axis fast rotation speed: 60/100 rpm；
X/Y/Z axis maximum cutting feed speed: 10 m/min；
B/C shaft maximum cutting feed speed: 60/100 rpm

Thermo Scientific Scios2 Hivac

Electron beam resolution: ≤0.7 nm@30 kV, ≤1.4 nm@1 kV;
Electron beam landing voltage: 20 eV ~ 30 keV (continuouslyadjustable);
Electron beam intensity: 0.8 pA ~ 400 nA;
lon beam resolution: ≤3.0 nm@30 kV;
lon beam acceleration voltage: minimum acceleration voltage of 500 V, maximum acceleration voltage of 30 kV;
lon beam intensity range: 0.8 pA ~ 65 nA

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Thermo Scientific Talos F200X S/TEM

Beam spot drift: ≤0.5 nm/min;
analytical beam current:≥1.5 nA@1 nm spotsize;
Total beam current: ≥50 nA；
Acceleration voltage: 20 kV~200 kV, continuously adjustable;
Information resolution in TEM mode: ≤0.12 nm;
Scanning transmission (STEM)system, resolution: ≤0.16 nm

JEOL JEM-ARM300F

Double aberration-corrected TEM

Standard Accelerating Voltage: 300 kV, 200 kV, 120 kV, 80 kV；
Electron gun: Cold field emission gun；
STEM Resolution: 300 kV/80 kV STEM Cs corrector installed, 53 pm / 96 pm；
Non-linear information limit 60 pm / 90 pm;
Linear information limit 90 pm/160 pm;
TEM Resolution: 300 kV/80 kV TEM Cs corrector installed, 50 pm

JEOL JEM-ARM200F

Resolution:
STEM HAADF image 70 pm (200 kV), 100 pm (80 kV), 160 pm (30 kV);
TEM information limit 100 pm (200 kV), 110 pm (80 kV), 250 pm (30 kV);
Electron gun: Cold field emission gun (Cold FEG)
Aberration corrector:
STEM: NEO ASCOR HOAC
TEM: CETCOR with Dss